Crystalline and electrical characteristics of C₆₀ uniformly doped GaAs layers
J. Nishinaga and Y. Horikoshi
J. Cryst. Growth, 2013. DOI:10.1016/j.jcrysgro.2012.12.044

Selective area growth of InAs nanostructures on faceted GaAs microstructure by migration enhanced epitaxy
M. Zander, J. Nishinaga, and Y. Horikoshi
J. Cryst. Growth, 2013. DOI: 10.1016/j.jcrysgro.2012.12.089

Characteristics of CuGaSe₂ layers grown on GaAs substrates
M. Fujita, A. Kawaharazuka, and Y. Horikoshi
J. Cryst. Growth, 2013. DOI: 10.1016/ /j.jcrysgro.2012.12.171

Electrical properties of C₆₀ and Si codoped GaAs layers
J. Nishinaga and Y. Horikoshi
J. Vac. Sci. Technol. B, 30, 02B116, Mar. 2012

Excitonic absorption on AlGaAs / GaAs superlattice solar cells
J. Nishinaga, A. Kawaharazuka, K. Onomitsu, K. H. Ploog, and Y. Horikoshi
Physica Status Solidi C, 9, 330-333, Feb. 2012

Structural properties of InAs-based nanostructures grown on GaAs(001) and GaAs(111)A by area selective epitaxy
M. Zander, J. Nishinaga, K. Iga, and Y. Horikoshi
Physica Status Solidi C, 9, 218-221, Feb. 2012

Growth of CuGaSe₂ layers on closely lattice-matched GaAs substrates by migration enhanced epitaxy
M. Fujita, A. Kawaharazuka, J. Nishinaga, K. H. Ploog, and Y. Horikoshi
Jpn. J. Appl. Phys. 50, 125502, Dec. 2011

Growth and characterization of C₆₀/GaAs interfaces and C₆₀ doped GaAs
J. Nishinaga and Y. Horikoshi
J. Cryst. Growth, 323, 135-139, May 2011

Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy
A. Kawaharazuka, K. Onomitsu, J. Nishinaga, and Y. Horikoshi
J. Cryst. Growth, 323, 504-507, May 2011

Area selective epitaxy of InAs on GaAs(001) and GaAs(111)A by migration enhanced epitaxy
M. Zander, J. Nishinaga, K. Iga, and Y. Horikoshi
J. Cryst. Growth 323, 9-12, May 2011

Effect of excitons in AlGaAs / GaAs superlattice solar cells
J. Nishinaga, A. Kawaharazuka, K. Onomitsu, K. H. Ploog, and Y. Horikoshi
Jpn. J. Appl. Phys. 50, 052302, May 2011

Negative differential resistance characteristics of nanoscale in-plane gate devices
Y. Komatsuzaki, K. Higashi, T. Kyougoku, K. Onomitsu and Y. Horikoshi
Phys. Status Solidi C, 8, 408, Feb. 2011

GaAs基板上フラーレンC₆₀の結晶成長とC₆₀ doped GaAsの電気的特性
西永慈郎、堀越佳治
表面科学, 31, 632-636, Dec. 2010

Negative differential resistance in InGaAs/InAlAs nanoscale in-plane structures
Y. Komatsuzaki, K. Higashi, T. Kyougoku, K. Onomitsu and Y. Horikoshi
Jpn. J. Appl. Phys. 49, 104001, Oct. 2010

Electrical properties of C₆₀ delta-doped GaAs and AlGaAs layers grown by MBE
J. Nishinaga, T. Hayashi, K. Hishida, and Y. Horikoshi
Phys. Status Solidi C, 7, 2486-2489, Oct. 2010

Crystal polarity effects on magnesium implantation into GaN layer
K.T. Liu, S.J. Chang, S.A. Wu, and Y. Horikoshi
Jpn. J. Appl. Phys. 49, 071001, Jul. 2010

Structural properties of C₆₀-multivalent metal composite layers grown by molecular beam epitaxy
J. Nishinaga, and Y. Horikoshi
J. Vac. Sci. Technol. B. 28, C3E10-C3E13, Apr. 2010

Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films
T. Takeuchi, J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
Defect and Diffusion Forum, 297-301, 849-852, Apr. 2010

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy
A. Kawaharazuka, T. Yoshizaki, T. Hiratsuka, and Y. Horikoshi
Phys. Status Solidi C, 7, 342-346, 2010.

Magnetic properties of multiply Mn delta-doped GaAs
A. Kawaharazuka, K. Yanagisawa, S. Takeuchi, and Y. Horikoshi
Jpn. J. Appl. Phys. 48, 113001, Nov. 2009

Effect of the MgO substrate on the growth of GaN
R. Suzuki, A. Kawaharazuka, and Y. Horikoshi
J. Cryst. Growth, 311, pp. 2021-2024, Mar. 2009

Growth of GaN with warm ammonia by molecular beam epitaxy
A. Kawaharazuka, T. Yoshizaki, K.H. Ploog, and Y. Horikoshi
J. Cryst. Growth, 311, pp. 2025-2028, Mar. 2009

The effects of rapid thermal annealing of doubled quantum dots grown by molecular beam epitaxy
S. Suraprapapich, Y.M. Shen, Y. Fainman, Y. Horikoshi, S. Panyakeow, C.W. Tu
J. Cryst. Growth, 311, 1791-1794, Mar. 2009

Crystalline and electrical characteristics of C₆₀-doped GaAs films
J. Nishinaga, T. Takada, T. Hayashi, and Y. Horikoshi
J. Cryst. Growth, 311, pp.2232-2235, Mar. 2009

RHEED intensity oscillation of C₆₀ layer epitaxial growth
J. Nishinaga, A. Kawaharazuka, and Y. Horikoshi
J. Cryst. Growth, 311, pp. 2227-2231, Mar. 2009

Investigation of C₆₀ Epitaxial Growth Mechanism on GaAs Substrates
J. Nishinaga, A. Kawaharazuka, and Y. Horikoshi
Jpn. J. Appl. Phys. 48, 025502, Feb. 2009

Area selective epitaxy of GaAs by migration-enhanced epitaxy with As₂ and As₄ arsenic sources
A. Kawaharazuka, I. Yoshiba, Y. Horikoshi
Appl. Surf. Sci., 255, pp. 737-739, Nov. 2008

RHEED intensity oscillations of C₆₀ growth on GaAs substrates.
J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
Appl. Surf. Sci., 255, pp. 682-684, Nov. 2008

High resolution X-ray photoelectron spectroscopy of beta gallium oxide films deposited by ultra high vacuum radio frequency magnetron sputtering
T. Takeuchi, H. Ishikawa, N. Takeuchi, Y. Horikoshi
Thin Solid Films, 516, pp.4593-4597, May. 2008

Area selective growth of GaAs by migration-enhanced epitaxy
Y. Horikoshi, T. Uehara, T. Iwai, I. Yoshiba
Phys. Stat. Sol. B, 244, pp.2697-2706, Aug. 2007

Amorphous Cu_xGa_1-xO Films Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering
H. Ishikawa, N. Takeuchi, N. Okuda, T. Takeuchi, Y. Horikoshi
Jpn. J. Appl. Phys. 46, pp.2527-2529, Apr. 2007

Characteristics of multivalent impurity doped C₆₀ films grown by MBE
J. Nishinaga, T. Aihara, A. Kawaharazuka, Y. Horikoshi
J. Crystal Growth, 301-302, pp.687-691, 2007

Enhanced magnetization by modulated Mn delta doping in GaAs
K. Yanagisawa, S. Takeuchi, H. Yoshitake, K. Onomitsu, Y. Horikoshi
J. Crystal Growth, 301-302, pp.634-637, 2007

MBE growth of GaN on MgO substrate
R. Suzuki, A. Kawaharazuka, Y. Horikoshi
J. Crystal Growth, 301-302, pp.478-481, 2007

Be and Mg co-doping in GaN
A. Kawaharazuka, T. Tanimoto, K. Nagai, Y. Tanaka, Y. Horikoshi
J.Crystal Growth, 301-302, pp.414-416, 2007

ZnO epitaxial films grown by flux-modulated RF-MBE
K. Hirano, M. Fujita, M. Sasajima, T. Kosaka, Y. Horikoshi
J. Crystal Growth, 301-302, pp.370-372, 2007

Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy
T. Chavanapanee, Y. Horikoshi
J. Crystal Growth, 301-302, pp.225-229, 2007

Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy
I. Yoshiba, T. Iwai, T. Uehara, Y. Horikoshi
J. Crystal Growth, 301-302, pp.190-193, 2007

Growth mechanism of GaAs microdisk structures by Area-Selective Epitaxy using Migration-Enhanced Epitaxy
T. Iwai, T. Toda, T. Uehara, I. Yoshiba, Y. Horikoshi
Jpn. J. Appl. Phys. 46, pp.514-517, 2007

Area-selective epitaxial growth of GaAs on GaAs(111)A substrates by Migration-Enhanced Epitaxy
T. Uehara, T. Iwai, I. Yoshiba Y. Horikoshi
Jpn. J. Appl. Phys. 46, pp.496-501, 2007

Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures
T. Chavanapranee, Y. Horikoshi
J. Appl. Phys. Vol. 100 (5), No.054505, 2006

Nanoscale selective area epitaxy of C₆₀ crystals on GaAs by molecular beam epitaxy
J. Nishinaga, T. Aihara, T. Toda, F. Matsutani, Y. Horikoshi
J. Vac. Sci. Technol. B. Vol. 24 (3), pp. 1587-1590, 2006

Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate
M. Fujita, R. Suzuki, M. Sasajima, T. Kosaka, Y. Deesirapipat, Y. Horikoshi
J. Vac. Sci. Technol. B. Vol. 24 (3), pp. 1668-1670, 2006

Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy
T. Chavanapranee, D. Ichiryu, Y. Horikoshi
Jpn. J. Appl. Phys. Vol. 45 (6A), pp. 4921-4925, 2006

Transparent RuOx contacts on n-ZnO
T. K. Lin, S. J. Chang, B. R. Huang, K. T. Lam, Y. S. Sun, M. Fujita, Y. Horikoshi
J. Electrochem. Soc. Vol. 153(7), pp. G677-G680, 2006

Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN
K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi
Microelectronics Journal Vol. 37 (5), pp.417-420, 2006

Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate
Y. Deesirapipat, M. Fujita, M. Sasajima, R. Suzuki, C. Antarasena, Y. Horikoshi
Jpn. J. Appl. Phys. Vol. 44 (7A), pp5150-5155, 2005

Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE
K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama and Y. Horikoshi
J. Cryst. Growth, Vol. 278, pp.699-703, 2005

Mechanical and optical characteristics of Al-doped C₆₀ films
J. Nishinaga, T. Aihara, H. Yamagata, Y. Horikoshi
J. Crystal Growth, Vol. 278, pp.633-637, 2005

Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer Layer
M. Fujita, M. Sasajima, Y. Deesirapipat, Y. Horikoshi
J. Crystal Growth, Vol. 278, pp.293-298, 2005

Crack-free ZnO layer growth on glass substrates by MgO-buffer Layer
Y. Deesirapipat, C. Antarasena、H. Fujita, M. Sasajima, R. Suzuki, Y. Horikoshi
Inst. Phys. Conf. Ser. Vol. 184, pp307-310, 2005

Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices
M. Kobayashi, J. Ueno, M. Enami, S. Katsuta, A. Ichiba, K. Ogura, K. Onomitsu, Y. Horikoshi
J. Crystal Growth, Vol. 278 (1-4), pp273-277, 2005

Magnesium/nitrogen and beryllium/nitrogen co-implantation into GaN
K. T. Liu, Y. K. Su, S. J. Chang, Y. Horikoshi
J. Appl. Phys. Vol. 98 (7), No. 073702, 2005

C and N co-implantation in Be-doped GaN
K. T. Liu, Y. K. Su, R. W. Chuang, S. I. Chang, Y. Horikoshi
Semi. Sci. Technol. Vol. 20 (8), pp. 740-744, 2005

ZnO MSM photodetectors with Ru contact electrodes
T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, Y. Horikoshi
J. Cryst. Growth, Vol. 281 (2-4), pp. 513-517, 2005

Selective growth of C₆₀ layers on GaAs and their crystalline characteristics
　 J. Nishinaga, M. Ogawa and Y. Horikoshi
Thin solid Films, vol.464/465, pp. 323-326, 2004

Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy
T. Toda, T. Hasegawa, T. Iwai, T. Uehara, Y. Horikoshi
Physica E, vol. 23, pp. 315-319, 2004

Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy
K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama and Y. Horikoshi
J. Vac. Sci. Technol. B, Vol. 22, No. 4, pp. 1746-1749, 2004

Selective growth of C₆₀ GaAs and the optical characteristic
M. Ogawa, J. Nishinaga, Y. Kida, H. Yamagata, T. Aihara, and Y. Horikoshi
J. Vac. Sci. Technol. B 22, No. 3, pp.1441-1443, 2004

Magnetic and electric field effect of photoluminescence of excitons bound to nitrogen atom pairs in GaAs
K. Onomitsu, T. Okabe, T. Makimoto, H. Saito, M. Ramsteiner, H. Zhu, A. Kawaharazuka, K. Ploog, and Y. Horikoshi
Jpn. J. Appl. Phys. Vol. 43, No.6B, pp.L756-L758, 2004

Molecular beam epitaxy growth of ZnO
M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi
J. Vac. Sci. Technol. B, Vol. 22, No. 3, pp.1484-1486, 2004

Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy
T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi
Jpn J. Appl. Phys. Vol. 43, No.5A, pp.2602-2606, 2004

Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers
K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu, Y. Horikoshi
Phys. Status Solidi B, Vol. 241 No.12, pp. 2693-2697, 2004

High quality GaN epitaxial layers grown by modulated beam growth method
K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su, S. J. Chang
Materials Chemistry and Physics, Vol. 86/1, pp.161-164, 2004

Modulated beam growth method for MBE grown GaN layers
K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su, S. J. Chang
J. Crystal Growth Vol. 263, pp. 400-405, 2004

Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
N. Kawamoto, M. Fujita, T. Tatsumi, Y. Horikoshi
Jpn. J. Appl. Phys. Vol. 42, pp. 7209-7212, 2003

Compositional nonuniformity in molecular beam epitaxy grown InAsSb on GaAs(111)A substrates
R. Suzuki, H. Amano, T. Kuroki, J. Nishinaga and Y. Horikoshi
Jpn. J. Appl. Phys.Vol. 42, pp.6260-6264, 2003

Area selective epitaxy of anti-dot structure by solid source MBE deposition sequence
D. Okada, H. Hasegawa, Y. Horikoshi, and T.Saito
Inst. Phys. Conf. Ser., No.174, Section 1, pp.33-37, 2003

極性制御によるBeドープp型GaNの成長
杉田茂宣、渡也寸雅、吉澤銀河、袖澤純、山水大史、堀越佳治
表面科学Vol.24, No.9.pp538-542, 2003

Molecular Beam Epitaxial Growth of ZnO on Si Substrate by Using Ozone as an Oxygen Source
M. Fujita, N. Kawamoto, T. Tatsumi, K. Yamagishi, Y. Horikoshi
Jpn. J. Appl. Phys. Vol.42, pp.67-70, 2003

Growth of Be-doped p-type GaN under Invariant Polarity Conditions
S. Sugita, Y. Watari, G. Yoshizawa, J. Sodesawa, H. Yamamizu, Kuan-Ting Liu, Yan-Kuin Su, Y. Horikoshi
Jpn. J. Appl. Phys., Vol. 42, pp. 7194-7197, 2003

Comparative study of p-type dopants, Mg and Be in GaN grown by Rf-MBE
S. Sugita, Y. Watari, G. Yoshizawa, J. Sodesawa, H. Yamamizu, K. T. Liu, Y. K. Su and Y. Horikoshi
Inst Phys. Conf. Ser., No. 174, Section 1, pp.29-33, 2003